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 2N5322 2N5323
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
HIGH SPEED MEDIUM VOLTAGE SWITCHES
DESCRIPTION
The 2N5322 and 2n5323 are silicon planar expitaxial PNP transistors in jedec TO-39 metal case intended for high voltage medium power applications in industrial and commercial equipment. The complementary NPN types are the 2N5320 and 2N5321 respectively
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
1 2 .7 0 (0 .5 0 0 ) m in .
0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia .
5 .0 8 (0 .2 0 0 ) ty p .
1
0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 )
2 3
2 .5 4 (0 .1 0 0 )
45
TO-39
Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector
ABSOLUTE MAXIMUM RATINGS
TCASE = 25c unless otherwise stated VCBO VCEV VCEO VEBO IC IB Ptot Tstg,Tj Collector - Base Voltage (IE = 0) Collector - Emitter Voltage (VBE = 1.5v) Emitter - Base Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tamb = 25C Tcase = 50C Storage and Junction temperature 2N5322 -100V -100V -75V -6V 2N5323 -75V -75V -50V -5V
-2A -1A 1W 10W -65 to +200C
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 C/W C/W
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
Prelim. 7/99
2N5322 2N5323
ELECTRICAL CHARACTERISTICS FOR (Tcase = 25C unless otherwise stated)
Parameter
ICBO IEBO Collector Cut Off Current Emitter Cut Off Current
Test Conditions
VCB = -80V VCB = -60V VEB = -5V VEB = -4V VBE = 1.5V IE = 0 2N5322
IE
Min.
Typ.
Max. Unit
-0.5 -5 -0.1 -0.5 A A
= 0 2N5323 = 0 2N5323
2N5322 2N5323
IC = 0 2N5322
IC
IC = -0.1mA -100 -75 -75 -50 -6 -5 -0.7 -1.2 -1.1 -1.4 30 10 -- 40 50 100 ns 1000 250 MHz 130 V
V(BR)CEV
Collector Emitter Breakdown Voltage IC = -10mA IB = 0
VCEO(SUS)* Collector Emitter Saturation Voltage IE = -0.1mA V(BR)EBO Emitter Base Breakdown Voltage IC = -500mA VCE(sat)* Collector Emitter Saturation Voltage IC = -500mA VBE* Base Emitter Voltage IC = -500mA IC = -1A hFE* DC Current Gain IC = -500mA fT ton toff Transistion Frequency Turn-On Time Turn Off Time IC = -50mA IC = -500mA IB1 = -50mA IC = -500mA IC = 0
2N5322 2N5323
pF
2N5322 2N5323
V
IB = -50mA
2N5322 2N5323
V
VCE = -4V
2N5322 2N5323
V
VCE = -4V VCE = -2V
2N5322
VCE = -4V
2N5323
VCE = -4V VCC = -30V VCC = -30V
IB1=-IB2 = -50mA
* Pulse test tp = 300ms , d = 1 %
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
Prelim. 7/99


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